Global Silicon Carbide Market from Global Insight Services is the single authoritative source of intelligence on Silicon Carbide Market.The report will provide you with analysis of impact of latest market disruptions such as Russia-Ukraine war and Covid-19 on the market. Report provides qualitative analysis of the market using various frameworks such as Porters’ and PESTLE analysis. Report includes in-depth segmentation and market size data by categories, product types, applications, and geographies. Report also includes comprehensive analysis of key issues, trends and drivers, rest Blockchain Market raints and challenges, competitive landscape, as well as recent events such as M&A activities in the market.
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Silicon carbide (SiC) is a compound of silicon and carbon with a chemical formula of SiC. It occurs in nature as the extremely rare mineral moissanite. Silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics which are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Silicon carbide is also used as a semiconductor in commercial and military applications.
In addition to its hardness, silicon carbide is notable for its high thermal conductivity, high electrical conductivity, and high mechanical strength. These properties make it an attractive material for a wide variety of applications in industries such as automotive, aerospace, electrical, and medical.
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Key Trends
One of the key trends in Silicon Carbide (SiC) technology is the increasing use of SiC devices in high-voltage, high-power applications. SiC devices offer several advantages over traditional silicon (Si) devices, including higher breakdown voltage, higher operating temperature, and lower power consumption. As a result, SiC devices are well suited for applications such as power converters, motor controllers, and power supplies, which are subject to high voltages and power levels.
Another key trend in SiC technology is the increasing use of SiC-based MOSFETs (metal-oxide-semiconductor field-effect transistors). SiC MOSFETs offer several advantages over traditional Si MOSFETs, including higher switching speeds, higher breakdown voltages, and lower power consumption. As a result, SiC MOSFETs are well suited for applications such as power converters, motor controllers, and high-speed digital circuits.
Finally, another key trend in SiC technology is the increasing use of SiC-based power semiconductor devices. SiC power semiconductor devices offer several advantages over traditional Si devices, including higher breakdown voltages, higher operating temperatures, and lower power consumption. As a result, SiC power semiconductor devices are well suited for applications such as power converters, motor controllers, and power supplies.
Key Drivers
The key drivers of the silicon carbide market are its unique properties, which make it ideal for a wide range of applications across a variety of industries. These properties include:
High thermal conductivity: silicon carbide is an excellent conductor of heat, making it ideal for applications where thermal management is critical, such as in power semiconductors.
High electrical conductivity: silicon carbide is also an excellent conductor of electricity, making it ideal for a wide range of electrical and electronic applications.
High mechanical strength: silicon carbide is much stronger than silicon, making it ideal for applications where strength and durability are required, such as in automotive and aerospace components.
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Market Segments
By Product
- Black SiC
- Green SiC
By Application
- Steel
- Automotive
- Aerospace
- Military & Defense
- Electrical & Electronics
- Healthcare
- Others
Key Players
- AGSCO Corp.
- Carborundum Universal Ltd.
- Washington Mills
- Coorstek
- Entegris, Inc.
- ESD-SIC b.v.
- Snam Abrasives Pvt. Ltd.
- Gaddis Engineered Materials
- Grindwell Norton Ltd.
- SK Siltron Co., Ltd.
- Cree Inc.
- Saint-Gobain
- Sandvik AB
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